Effects of gate work function on E-mode AlGaN/GaN HEMTs with stack gate β-Ga2O3/p-GaN structure

Gate Stability of GaN-Based HEMTs with P-Type Gate

This paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on combined electrical and electroluminescence measurements, we demonstrate the following results: (i) the catastrophic breakdown voltage of the gate diode is higher than 11 V at room temperature; (ii) in a step-stress ex...

AlN/GaN insulated gate HEMTs with HfO2 gate dielectric

AlN/GaN single heterojunction MOS-HEMTs grown by molecular beam epitaxy have been fabricated utilising HfO2 high-K dielectrics deposited by atomic layer deposition. Typical DC transfer characteristics of 1.3 mm gate length devices show a maximum drain current of 950 mA/mm and a transconductance of 210 mS/mm with gate currents of 5 mA/mm in pinch-off. Unity gain cutoff frequencies, ft and fmax, ...

Thermal Stability of AlGaN/GaN HEMTs Using High Work Function Pd-gate, Ir-gate, Ni-gate Designs

Influence of the Gate Recess on the Performance of Enhancement-Mode AlGaN/GaN HEMTs

After the excellent performance achieved by normally-on AlGaN/GaN high electron mobility transistors (HEMTs), research focus has shifted to normallyoff structures. We explore the advantages offered by the recessed-gate technique using our two-dimensional device/circuit simulator Minimos-NT. Excellent agreement with experimental data is achieved, and theoretical AC performance for different rece...

Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al2O3 Passivation

We studied submicrometer (LG = 0.15−0.25 μm) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al2O3 passivation. The combination of a low-damage gate-recess technology and the low sheet resistance of the InAlN/AlN/GaN structure resulted in HEMTs with a maximum dc output current density of IDS,max = 1.5 A/mm and a record peak extrinsic transcond...